Infineon BSC010N04LSATMA1 OptiMOS™ 5 Power MOSFET: Datasheet, Characteristics, and Application Circuit Design
The Infineon BSC010N04LSATMA1 is a state-of-the-art N-channel power MOSFET from Infineon's OptiMOS™ 5 40 V family, representing a significant leap forward in power efficiency and power density for a wide range of DC-DC conversion and motor control applications. This article delves into its key specifications, operational characteristics, and provides a practical application circuit design example.
Datasheet Overview and Key Characteristics
The datasheet for the BSC010N04LSATMA1 reveals a component engineered for maximum performance in a compact footprint. Its primary electrical characteristics are its foundation.
Ultra-Low On-Resistance (RDS(on)): This is arguably the most critical parameter. The device boasts an exceptionally low RDS(on) of just 1.0 mΩ (max) at VGS = 10 V. This minimal resistance directly translates to reduced conduction losses, leading to higher efficiency and less heat generation.
High Current Handling: It features a continuous drain current (ID) of 100 A at a case temperature of 100°C, showcasing its ability to handle high power in demanding environments.
Low Gate Charge (Qg): With a total gate charge (Qg) of 78 nC (typ), the MOSFET offers very fast switching capabilities. This low Qg minimizes switching losses, which is crucial for high-frequency SMPS designs, and reduces the demands on the gate driver circuitry.
Optimized Technology: Built on Infineon’s advanced OptiMOS™ 5 technology, it offers an improved figure-of-merit (FOM = RDS(on) × Qg), achieving an optimal balance between conduction and switching losses.
Package: It is housed in a PG-TDSON-8 (SuperSO8) package. This package offers an excellent power density and low parasitic inductance, which is vital for managing voltage spikes during fast switching transitions.
Application Circuit Design: A Synchronous Buck Converter
A prime application for the BSC010N04LSATMA1 is in the synchronous buck converter, a topology ubiquitous in modern computing, telecom, and industrial power supplies for stepping down a higher voltage to a lower level with high efficiency.
Design Example: 12V to 1.2V @ 30A CPU Core Voltage Regulator
Topology: Synchronous Buck Converter
Input Voltage (VIN): 12 V
Output Voltage (VOUT): 1.2 V
Output Current (IOUT): 30 A
Switching Frequency (fSW): 500 kHz
Component Roles:
1. Control IC: A dedicated buck controller with integrated drivers (e.g., Infineon IR35215) is selected. It generates the PWM signals and provides the necessary drive current for the MOSFETs.
2. High-Side MOSFET (Q1): This MOSFET switches the input voltage to the inductor. While the BSC010N04LS could be used here, a device optimized for slightly lower Qg might be preferred for the high-side role to minimize switching losses.
3. Low-Side MOSFET (Q2 - Synchronous Rectifier): The BSC010N04LSATMA1 is ideally suited for this role. Its ultra-low RDS(on) is the dominant factor here, as it conducts for a significant portion of the switching cycle. Minimizing conduction loss in the low-side switch is paramount for achieving peak efficiency at high output currents.
4. Inductor (L1): Selected for the appropriate ripple current at the chosen switching frequency.
5. Output Capacitors (COUT): A combination of low-ESR MLCC and polymer capacitors is used to filter the output ripple and handle transient load steps.
Design Considerations:
Gate Driving: The controller’s gate driver must be capable of sourcing and sinking the peak current required to charge and discharge the Qg of the MOSFETs quickly. A driver strength of at least 3A to 4A is recommended.
Layout: The power loop (Q1 -> Q2 -> CIN) must be as small and tight as possible to minimize parasitic inductance, which causes voltage spikes and EMI. The use of a PG-TDSON-8 package aids in achieving this.
Thermal Management: Even with high efficiency, significant power is dissipated. Proper PCB layout with large copper pours for heatsinking and potentially a thermal interface to the chassis is essential to keep the junction temperature within safe limits.
ICGOOODFIND: The Infineon BSC010N04LSATMA1 OptiMOS™ 5 MOSFET sets a high bar for performance in power conversion, offering an exceptional blend of ultra-low RDS(on) and low gate charge. Its superior efficiency and high current capability make it an ideal candidate for demanding synchronous rectification roles in server VRMs, telecom bricks, and high-performance motor drives, enabling designers to push the boundaries of power density and thermal management.
Keywords:
1. Ultra-Low RDS(on)
2. OptiMOS™ 5 Technology
3. Synchronous Buck Converter
4. Power Efficiency
5. PG-TDSON-8 Package
