Infineon BSC100N06LS3GATMA1 OptiMOS Power MOSFET Datasheet and Application Overview
The Infineon BSC100N06LS3GATMA1 is a benchmark N-channel power MOSFET belonging to the company’s OptiMOS™ 3 family, renowned for its exceptional efficiency and robustness in power conversion applications. Engineered with an ultra-low gate charge and minimal on-state resistance, this component is a premier choice for designers aiming to maximize system efficiency and power density.
Key Electrical Characteristics and Performance
Housed in a space-saving PG-TDSON-8 (SuperSO8) package, this MOSFET is characterized by a drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of up to 100 A at a case temperature of 25°C. Its most defining feature is its extremely low typical on-state resistance (RDS(on)) of just 1.0 mΩ at 10 V gate-source voltage. This low RDS(on) is instrumental in minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation.
The device is optimized for switching performance. Its low total gate charge (QG) and small reverse recovery charge (Qrr) ensure swift switching transitions, which are critical for high-frequency operation in switch-mode power supplies (SMPS) and motor drives. This results in significantly lower switching losses, allowing systems to operate at higher frequencies without a penalty in efficiency.
Primary Application Areas
The combination of high current handling, low resistance, and excellent switching characteristics makes the BSC100N06LS3GATMA1 exceptionally versatile. Its primary applications include:
Synchronous Rectification in SMPS: Particularly in server and telecom power supplies and DC-DC converters, where its low RDS(on) is crucial for minimizing losses on the secondary side.
Motor Control and Driving: Used in H-bridge configurations for brushed DC and low-voltage stepper motors in industrial automation, robotics, and automotive systems.
Power Management in Computing: Ideal for high-efficiency DC-DC conversion in motherboard voltage regulator modules (VRMs) and point-of-load (POL) converters.
Battery Management Systems (BMS): Employed in protection circuits and charge/discharge control paths due to its ability to handle high currents with minimal voltage drop.
Thermal and Package Considerations
The PG-TDSON-8 package offers a superior thermal performance compared to standard SO-8 packages. Its exposed die pad allows for efficient heat transfer to the PCB, making the device reliable even under high-stress conditions. Designers must ensure a well-designed PCB layout with adequate thermal vias and copper area to fully leverage the MOSFET’s power handling capabilities and maintain a low junction temperature.
ICGOODFIND Summary
The Infineon BSC100N06LS3GATMA1 OptiMOS™ 3 power MOSFET stands out as a high-performance solution engineered for efficiency and power density. Its industry-leading 1.0 mΩ RDS(on) and optimized switching characteristics make it a superior component for demanding applications in power conversion, motor control, and computing. By significantly reducing both conduction and switching losses, it enables the development of more compact, cooler-running, and highly efficient electronic systems.
Keywords:
1. OptiMOS™ 3
2. Low RDS(on)
3. Synchronous Rectification
4. Power Efficiency
5. PG-TDSON-8 Package
