Infineon IPN60R2K1CEATMA1 CoolMOS™ Power Transistor: Datasheet, Application Circuit, and Key Features

The Infineon IPN60R2K1CEATMA1 is a state-of-the-art 600 V CoolMOS™ P7 power MOSFET, representing a significant leap forward in high-efficiency power conversion technology. Engineered for robustness and performance, this transistor is a cornerstone component for modern switch-mode power supplies (SMPS), industrial drives, and a wide array of consumer and computing applications.

Key Features and Benefits

The IPN60R2K1CEATMA1 is packed with features designed to maximize efficiency and reliability while minimizing system size and cost.

Exceptional Efficiency: Built on Infineon's advanced superjunction (SJ) technology, this MOSFET boasts an ultra-low typical on-state resistance (R DS(on)) of just 120 mΩ. This directly translates to reduced conduction losses, enabling higher overall system efficiency and lower energy consumption.

Superior Switching Performance: The device features minimized gate charge (Q G) and low internal capacitances. This allows for very fast switching speeds, which is critical for high-frequency operation. Faster switching reduces switching losses and allows designers to use smaller magnetic components, shrinking the overall system footprint.

Enhanced Robustness and Reliability: The P7 technology incorporates a strong intrinsic body diode with excellent reverse recovery characteristics, enhancing its durability in hard-switching and bridge-topology applications. It also offers a high avalanche ruggedness, ensuring stable operation under extreme conditions.

Optimized for Ease of Use: The product is halogen-free and RoHS compliant, meeting stringent environmental standards. Its low gate threshold voltage makes it easy to drive, simplifying gate driver design.

Application Circuit Example

A primary application for the IPN60R2K1CEATMA1 is in the power factor correction (PFC) stage of an SMPS. Below is a simplified diagram of a typical boost PFC circuit:

```

AC Input ───►|Rectifier Bridge|───►[Inductor L1]───┬───────────────► Output +

│ │

├───[IPN60R2K1CEATMA1]─┤

│ │

[PFC Diode] [Capacitor]

│ │

└──────────────────────┴───────────────► Output -

```

In this circuit:

1. The AC input is rectified to a pulsating DC.

2. The CoolMOS™ transistor acts as a high-speed switch, controlled by a dedicated PFC IC.

3. By carefully modulating the switching duty cycle, the input current is shaped to be a sinusoidal waveform in phase with the input voltage, achieving a near-unity power factor.

4. The low R DS(on) minimizes losses as the MOSFET handles the primary switching current, while its fast switching capability allows for high-frequency operation, making the inductor (L1) smaller and more cost-effective.

Datasheet Overview

The datasheet for the IPN60R2K1CEATMA1 is an essential resource for any design engineer. It provides comprehensive information including:

Absolute Maximum Ratings: Defining the operational boundaries for voltage, current, and temperature.

Electrical Characteristics: Detailed tables and graphs for parameters like R DS(on), gate charge (Q G), capacitance values, and switching times.

Thermal Characteristics: Key data such as junction-to-ambient and junction-to-case thermal resistance, vital for heat sink design.

Safe Operating Area (SOA) Graphs: Illustrating the current and voltage limits within which the device can be operated safely.

ICGOO FIND: The Infineon IPN60R2K1CEATMA1 CoolMOS™ P7 sets a high benchmark for power MOSFETs, offering an outstanding balance of ultra-low on-resistance, fast switching speed, and proven robustness. It is an ideal solution for designers aiming to create smaller, cooler, and more efficient power supplies for demanding applications in industrial, consumer, and computing markets.

Keywords:

1. CoolMOS™ P7

2. Power Transistor

3. Ultra-Low RDS(on)

4. High-Efficiency

5. Application Circuit