Infineon IRFR48ZTRLPBF: Key Specifications and Application Circuit Design Considerations

The Infineon IRFR48ZTRLPBF is a member of the HEXFET® power MOSFET family, renowned for its efficiency and robustness in a wide array of power conversion applications. This N-channel MOSFET is engineered using advanced silicon technology, offering a compelling blend of low on-state resistance (RDS(on)) and high current handling capability, making it a prime choice for designers of switch-mode power supplies (SMPS), motor control circuits, and high-efficiency DC-DC converters.

Key Specifications

Understanding the core electrical characteristics is paramount for effective implementation. The following specifications define the operational boundaries of the IRFR48ZTRLPBF:

Drain-Source Voltage (VDS): 55V. This rating makes it suitable for a broad range of low-voltage applications, including 12V, 24V, and 48V bus systems.

Continuous Drain Current (ID): 130A at a case temperature (TC) of 25°C. This exceptionally high current rating is a standout feature, though it is crucial to consider derating with increased temperature.

On-Resistance (RDS(on)): Max 1.8 mΩ at VGS = 10 V, ID = 64 A. This ultra-low resistance is the key to minimizing conduction losses, leading to higher efficiency and reduced heat generation.

Gate Threshold Voltage (VGS(th)): Between 2V and 4V. This standard threshold voltage ensures compatibility with a wide variety of logic-level and standard gate drivers.

Total Gate Charge (Qg): Typ. 150 nC. This parameter is critical for determining switching speed and the driving power required from the gate driver circuit.

Avalanche Rated: Yes. This ruggedness feature provides an added layer of protection against voltage spikes from inductive loads, enhancing system reliability.

Application Circuit Design Considerations

Successfully integrating the IRFR48ZTRLPBF into a design requires careful attention to several critical areas beyond simply reviewing the datasheet.

1. Gate Driving Considerations:

The high current capability of this MOSFET is accompanied by a significant gate charge (Qg). A gate driver IC is absolutely essential—a microcontroller GPIO pin is insufficient. The driver must be capable of sourcing and sinking large peak currents (often several amperes) to rapidly charge and discharge the MOSFET's gate capacitance. This minimizes the transition time through the linear region, thereby reducing switching losses. A gate resistor (typically between 2Ω and 10Ω) is recommended to control the slew rate, dampen ringing, and prevent parasitic oscillations.

2. Thermal Management:

Despite its low RDS(on), at high currents the power dissipation (P = I² RDS(on)) can be substantial. Effective thermal management is non-negotiable. A properly sized heatsink is required to maintain the junction temperature within safe limits. The maximum junction temperature (Tjmax) is 175°C, but operating far below this value is advised for long-term reliability. Utilizing a PCB with thick copper layers and thermal vias directly under the device's drain tab (D2PAK package) is a highly effective method to draw heat away from the die.

3. Layout Parasitics:

Parasitic inductance in the high-current loop (drain and source connections) and the gate drive loop can cause severe voltage spikes, ringing, and potential false triggering. To mitigate this:

Keep the high-current paths as short, direct, and wide as possible.

Use a continuous ground plane.

Place the gate driver IC very close to the MOSFET gate and source pins.

Use dedicated decoupling capacitors very near the device's drain and source terminals.

4. Body Diode and Inductive Loads:

The intrinsic body diode will conduct during switching cycles with inductive loads. While avalanche rated, the reverse recovery characteristics of this diode can contribute to losses and EMI. In circuits like motor drives or half-bridge/bridge topologies, careful consideration of the diode's reverse recovery charge (Qrr) is necessary. For very high-frequency switching, an external Schottky diode may be considered to bypass the slower body diode.

ICGOOODFIND

The Infineon IRFR48ZTRLPBF is a highly capable power MOSFET that excels in high-current, low-voltage applications. Its standout features are its extremely low on-resistance and high current capacity. Design success hinges on respecting its requirements: a robust gate driver, meticulous thermal management, and a low-inductance PCB layout are critical to unleashing its full performance and ensuring system reliability.

Keywords:

Power MOSFET, Low RDS(on), Gate Driver, Thermal Management, Switching Losses