Infineon PVT412LSPBF N-Channel MOSFET: Datasheet, Application Notes, and Technical Specifications

The Infineon PVT412LSPBF is a state-of-the-art N-Channel Enhancement Mode MOSFET housed in a compact SC-75 (TSOP-6) package. Engineered for high efficiency in power management, this device is a cornerstone component for designers working on space-constrained, portable electronic devices. Its combination of low on-state resistance (RDS(on)) and high current handling capability makes it an ideal choice for a wide array of switching applications.

Technical Specifications and Key Features

The performance of the PVT412LSPBF is defined by several critical electrical characteristics, as detailed in its datasheet:

Drain-Source Voltage (VDS): 60 V. This voltage rating provides a sufficient safety margin for a variety of low-voltage power applications, including those based on 12V or 24V systems.

Continuous Drain Current (ID): 2.5 A at a case temperature (TC) of 25°C. This robust current rating allows it to drive significant loads.

On-State Resistance (RDS(on)): A remarkably low 45 mΩ (max) at VGS = 10 V. This is a pivotal feature, as it directly translates to reduced conduction losses, higher efficiency, and lower heat generation during operation.

Gate Threshold Voltage (VGS(th)): Between 1 V and 2.5 V. This low threshold voltage ensures excellent compatibility with modern microcontrollers (MCUs) and logic-level circuits (3.3 V or 5 V), often eliminating the need for a separate gate driver IC.

Low Gate Charge (QG): The low total gate charge enables very fast switching speeds, which is essential for high-frequency switching regulators to minimize switching losses.

Application Notes and Circuit Design

The PVT412LSPBF is predominantly used as a high-side or low-side switch in DC-DC conversion circuits. Its primary applications include:

Load Switching: Power distribution management in smartphones, tablets, and portable devices.

DC-DC Converters: Serving as the main switching element in step-down (buck) and step-up (boost) converter topologies.

Motor Control: Driving small DC motors in consumer electronics and industrial modules.

Battery Management Systems (BMS): Used in protection circuits for discharge control.

When designing with this MOSFET, several best practices should be observed:

1. Gate Driving: Ensure the driving circuit can supply enough peak current to charge and discharge the gate quickly. A series gate resistor (e.g., 10Ω) is recommended to dampen ringing and prevent oscillations.

2. Thermal Management: Despite its small size, attention to PCB layout is crucial for heat dissipation. Use adequate copper area on the PCB connected to the drain pins to act as a heatsink. This improves the device's ability to handle higher continuous current.

3. Protection: Consider the application's environment. For inductive loads (like motors), include a flyback diode or other suppression circuitry to protect the MOSFET from voltage spikes during switching.

Conclusion and ICGOODFIND Summary

ICGOODFIND: The Infineon PVT412LSPBF is a highly efficient N-Channel MOSFET that excels in power density and thermal performance. Its standout features of ultra-low RDS(on) and a logic-level gate make it a superior choice for power management in compact, battery-operated devices. Designers prioritizing efficiency, size, and simplicity in their power switching designs will find this component exceptionally capable.

Keywords: N-Channel MOSFET, Low RDS(on), Logic Level, Power Management, SC-75 Package.